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Karl Schneider

Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors

AutorSchneider, Karl

VerlagUniversitätsverlag Karlsruhe, Karlsruhe

ISBN3866440219

Veröffentlicht
am:
19.04.2006

Erscheinungs-
jahr
2006

VerfügbarkeitAktiv

Downloads:

Für Zitate bitte die folgende URL verwenden:
http://dx.doi.org/10.5445/KSP/1000004373

Abstract

This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers.