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Jutta Kühn

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

(Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik ; 62)

AutorKühn, Jutta

VerlagKIT Scientific Publishing, Karlsruhe

ISBN9783866446151

UmfangXI, 230 S.

Veröffentlicht
am:
17.06.2011

Erscheinungs-
jahr
2011

VerfügbarkeitAktiv

Downloads:

Für Zitate bitte die folgende URL verwenden:
http://dx.doi.org/10.5445/KSP/1000021579

Abstract

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.