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  • Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors

    Karl Schneider

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    This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers.

    Umfang: VI, 132 S.

    Preis: €29.90 | £28.00 | $53.00

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    Empfohlene Zitierweise
    Schneider, K. 2006. Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors. Karlsruhe: KIT Scientific Publishing. DOI: https://doi.org/10.5445/KSP/1000004373
    Schneider, K. (2006) Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors. Karlsruhe: KIT Scientific Publishing. DOI: https://doi.org/10.5445/KSP/1000004373
    Schneider, Karl. Broadband Amplifiers for High Data Rates Using InP/InGaAs Double Heterojunction Bipolar Transistors. KIT Scientific Publishing, 2006. DOI: https://doi.org/10.5445/KSP/1000004373
    Schneider, K. (2006). Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors. Karlsruhe: KIT Scientific Publishing. DOI: https://doi.org/10.5445/KSP/1000004373
    Schneider, Karl. Broadband Amplifiers for High Data Rates Using InP/InGaAs Double Heterojunction Bipolar Transistors. Karlsruhe: KIT Scientific Publishing, 2006. DOI: https://doi.org/10.5445/KSP/1000004373




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    Weitere Informationen

    Veröffentlicht am 19. April 2006

    Sprache

    Englisch

    Seitenanzahl:

    145

    ISBN
    Paperback 978-3-86644-021-0

    DOI
    https://doi.org/10.5445/KSP/1000004373