This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers.
Umfang: VI, 132 S.
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Schneider, K. 2006. Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors. Karlsruhe: KIT Scientific Publishing. DOI: https://doi.org/10.5445/KSP/1000004373
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Veröffentlicht am 19. April 2006